10v drive nch mosfet R6020ANZ ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low input capacitance. 3) high esd. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 360 R6020ANZ ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 20 a pulsed i dp ? 80 a continuous i s 20 a pulsed i sp 80 a avalanche current i as 10 a avalanche energy e as 26.7 mj power dissipation p d 120 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25c *3 limited only by maximum channel temperature allowed. *4 t c =25c ? thermal resistance symbol limits unit channel to case r th (ch-c) 1.04 ? c / w * t c =25c parameter type source current (body diode) drain current parameter *1 *1 (1) gate (2) drain (3) source ? 1 body diode *2 *2 *3 *4 *3 * 15.5 3.6 5.5 3.0 2.0 3.0 0.9 5.45 5.45 0.75 2.0 4.5 2.0 14.5 16.5 26.5 2.5 14.8 0.44 16.5 3.5 10.0 to-3pf (1) (2) (3) (1) (3) (2) ?1 (1) gate (2) drain (3) source 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6020ANZ ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.95 - 4.15 v v ds =10v, i d =1ma forward transfer admittance l y fs l7 - - sv ds =10v, i d =10a input capacitance c iss - 2040 - pf v ds =25v output capacitance c oss - 1660 - pf v gs =0v reverse transfer capacitance c rss - 70 - pf f=1mhz turn-on delay time t d(on) - 40 - ns v dd 300v, i d =10a rise time t r - 60 - ns v gs =10v turn-off delay time t d(off) - 230 - ns r l =30 ? fall time t f - 70 - ns r g =10 ? total gate charge q g - 65 - nc v dd 300v gate-source charge q gs - 10 - nc i d =20a gate-drain charge q gd - 25 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =20a, v gs =0v *pulsed conditions ? parameter static drain-source on-state resistance r ds (on) i d =10a, v gs =10v - 0.17 0.22 parameter conditions * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6020ANZ ? electrical characteristic curves 0.01 0.1 1 10 100 0.1 1 10 100 1000 p w = 10 ms ta = 25 c single pulse p w = 100 us p w = 1 ms operation in this area is limited by r ds(on) 0 0.1 0.2 0.3 0.4 0.5 -50 0 50 100 150 v gs = 10 v pulsed i d = 10 a i d = 20 a 0 5 10 15 20 0 1 2 3 4 5 ta= 25 c pulsed v gs = 4.5 v v gs = 5.0 v v gs = 5.5 v v gs = 6.0 v v gs = 6.5 v v gs = 7.0 v v gs = 8.0 v v gs = 10 v 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 ta= 25 c pulsed v gs = 10 v v gs = 5.0 v v gs = 4.5 v v gs = 6.0 v v gs = 7.0 v v gs = 6.5 v v gs = 5.5 v v gs = 8.0 v fig. 2 : typical output characteristics( ) 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 v ds = 10 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 4 typical transfer characteristics 0.01 0.1 1 10 0.001 0.1 10 v gs = 10 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 6 static drain - source on - state resistance vs. drain current 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 ta= 25 c pulsed i d = 10 a i d = 20 a fig. 7 static drain - source on - state resistance vs. gate source voltage 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 9 forward transfer admittance vs. drain current fig. 3 : typical output characteristics( ) fig. 8 static drain - source on - state resistance vs. channel temperature fig. 5 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10 v i d = 1 ma drain - source voltage : v ds ( v ) drain current : i d (a) drain - source voltage: v ds (v) drain current: i d (a) drain - source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain - source on - state resistance : r ds(on) ( ) channel temperature: t ch ( c) gate threshold voltage: v gs(th) (v) gate - source voltage : v gs (v) drain current : i d (a) gate - source voltage : v gs (v) static drain - source on - state resistance : r ds(on) ( ) channel temperature: t ch ( c) static drain - source on - state resistance : r ds(on) ( ) drain current : i d (a) forward transfer admittance : |yfs| (s) fig. 1 maximum safe operating aera 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6020ANZ 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25 c single pulse : 1 unit rth ch - a t = t rth ch - a rth ch - a = 27.3 c/w 10 100 1000 0.1 1 10 100 ta= 25 c di / dt= 100 a / s v gs = 0 v pulsed fig. 13 reverse recovery time vs.reverse drain current 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs = 0 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 10 reverse drain current vs. sourse - drain voltage 0 5 10 0 10 20 30 40 50 60 70 ta= 25 c v dd = 300 v i d = 20 a r g = 10 pulsed fig. 12 dynamic input characteristics 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c oss c rss ta= 25 c f= 1 mhz v gs = 0 v fig. 11 typical capacitance vs. drain - source voltage 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25 c v dd = 300 v v gs = 10 v r g = 10 pulsed fig. 14 switching characteristics fig. 15 normalized transient thermal resistance vs. pulse width total gate charge : q g (nc) gate - source voltage : v gs (v) drain - source voltage : v ds (v) capacitance : c (pf) source - drain voltage : v sd (v) source current : i s (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient thermal resistance : r (t) 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6020ANZ ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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